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Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature

Journal Article · · Physical Review Letters
 [1];  [2]; ; ; ; ;  [3];  [4];  [5]; ;  [6]; ; ;  [7]; ; ;  [8]; ;  [9];  [9]
  1. CERN, European Organization for Nuclear Research, CH-1211 Geneva 23 (Switzerland)
  2. INFM-CNR, Via Vallotti 9, 25133 Brescia (Italy)
  3. INFN Sezione di Ferrara, Dipartimento di Fisica, Universita di Ferrara Via Saragat 1, 44100 Ferrara (Italy)
  4. INFN Laboratori Nazionali di Legnaro, Viale Universita 2, 35020 Legnaro (PD) (Italy)
  5. Dipartimento di Ingegneria dei Materiali e Tecnologie Industriali, Universita di Trento, Via Mesiano 77, 38050 Trento (Italy)
  6. INFN Sezione di Perugia, via Pascoli, 06123 Perugia (Italy)
  7. Dipartimento di Fisica, Universita degli Studi di Perugia via Pascoli, 06123 Perugia (Italy)
  8. INFN Sezione di Roma, Piazzale Aldo Moro 2, 00185 Rome (Italy)
  9. Dipartimento di Fisica, Universita di Roma 'La Sapienza' Piazzale A. Moro 2 I-00185 Rome (Italy)
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The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon crystal has been investigated as a function of the crystal curvature with 400 GeV/c protons on the H8 beam line at the CERN Super Proton Synchrotron. This Letter describes the analysis performed at six different curvatures showing that the optimal radius for volume reflection is approximately 10 times greater than the critical radius for channeling. A strong scattering of the beam by the planar potential is also observed for a bend radius close to the critical one.
OSTI ID:
21179964
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 23 Vol. 101; ISSN 0031-9007; ISSN PRLTAO
Country of Publication:
United States
Language:
English

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Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
CERN SPS SYNCHROTRON
CHANNELING
CRYSTALS
GEV RANGE 100-1000
POTENTIALS
PROTON BEAMS
PROTONS
REFLECTION
SCATTERING
SILICON