Modification of graphene properties due to electron-beam irradiation
- Department of Electrical Engineering, Nano-Device Laboratory, University of California, Riverside, Riverside, California 92521 (United States) and Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, Riverside, California 92521 (United States)
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5-20 keV). It was found that the radiation exposures result in the appearance of the strong disorder D band around 1345 cm{sup -1}, indicating damage to the lattice. The D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests graphene's transformation to the nanocrystalline and then to amorphous form. The results have important implications for graphene characterization and device fabrication, which rely on the electron microscopy and focused ion beam processing.
- OSTI ID:
- 21175855
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 94; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition
Graphene defect formation by extreme ultraviolet generated photoelectrons
Reduction of 1/f noise in graphene after electron-beam irradiation
Journal Article
·
Sun Apr 15 00:00:00 EDT 2012
· Journal of Applied Physics
·
OSTI ID:22038940
Graphene defect formation by extreme ultraviolet generated photoelectrons
Journal Article
·
Thu Aug 07 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22314706
Reduction of 1/f noise in graphene after electron-beam irradiation
Journal Article
·
Mon Apr 15 00:00:00 EDT 2013
· Applied Physics Letters
·
OSTI ID:22162848