Enhancement of spin-asymmetry by L2{sub 1}-ordering in Co{sub 2}MnSi/Cr/Co{sub 2}MnSi current-perpendicular-to-plane magnetoresistance devices
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
Co{sub 2}MnSi/Cr/Co{sub 2}MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co{sub 2}MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L2{sub 1}-ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and {delta}RA of 6.5 m{omega} {mu}m{sup 2} were achieved by annealing at 400 deg. C. These results indicate that promoting the degree of L2{sub 1}-ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.
- OSTI ID:
- 21175854
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 1; Other Information: DOI: 10.1063/1.3068492; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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