Influence of the contact metal on the performance of n-type carbonyl-functionalized quaterthiophene organic thin-film transistors
- IMEC v.z.w., SOLO/PME, Kapeldreef 75, B-3001 Leuven (Belgium)
- Polyera Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077 (United States)
Organic thin-film transistors using 5, 5-diperfluorohexylcarbonyl-2,2:5,2:5,2-quaterthiophene (DFHCO-4T) as the electron conducting organic semiconductor are fabricated and the performance of these transistors with different top-contact metals is investigated. Transistors with Au source-drain top contacts attain an apparent saturation mobility of 4.6 cm{sup 2}/V s, whereas this parameter is 100 times lower for similar transistors with Al/LiF top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor charge injection properties resulting from a redox reaction between Al and DFHCO-4T.
- OSTI ID:
- 21175841
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 26; Other Information: DOI: 10.1063/1.3059556; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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