Intracavity terahertz generation inside a high-energy ultrafast soliton fiber laser

Journal Article · Mon Dec 29 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3056118· OSTI ID:21175831

Matthaeus, Gabor; Ortac, Buelend; Limpert, Jens; Nolte, Stefan ^[1]; Hohmuth, Rico; Voitsch, Martin; Richter, Wolfgang ^[2]; Pradarutti, Boris; Tuennermann, Andreas ^[3]

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1. Institute of Applied Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, Jena D-07743 (Germany)
2. BATOP GmbH, Wildenbruchstrasse 15, Jena D-07745 (Germany)
3. Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Strasse 7, Jena D-07745 (Germany)

Intracavity terahertz emission inside a high-energy ultrafast Yb-doped fiber laser is presented. The terahertz radiation is generated by a transient photocurrent induced at the surface of a saturable InGaAs multiquantum well grown by molecular beam epitaxy on top of a semiconductor Bragg reflector. This device simultaneously works as the saturable absorber mirror for initiating and managing the passive mode locking required for the ultrashort pulse operation of the laser system. The maximum terahertz average power achieved is 4.2 {mu}W, which reveals a net conversion efficiency of 3.1x10{sup -5}.

• OSTI ID: 21175831
• Journal Information: Applied Physics Letters, Vol. 93, Issue 26; Other Information: DOI: 10.1063/1.3056118; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DOPED MATERIALS
FIBERS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
MODE LOCKING
MOLECULAR BEAM EPITAXY
OPTICS
PHOTOCONDUCTIVITY
PULSES
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SOLITONS