Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
- Institute of High Pressure Physics UNIPRESS, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
- TopGaN Ltd., Sokolowska 29/37 01-142 Warszawa (Poland)
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32, 02-668 Warsaw (Poland)
We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentional donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.
- OSTI ID:
- 21175693
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 17; Other Information: DOI: 10.1063/1.3013352; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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