Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)
Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the SiO{sub 2}/Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.
- OSTI ID:
- 21175687
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 16; Other Information: DOI: 10.1063/1.2970085; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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