Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching

Journal Article · Mon Sep 29 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2994691· OSTI ID:21175628

Avella, M; Jimenez, J ^[1]; Pommereau, F ^[2]; Landesman, J P; Rhallabi, A ^[3]

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1. Fisica Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain)
2. Alcatel-Thales III-V Laboratory, 91128 Palaiseau (France)
3. Institut des Materiaux Jean-Rouxel, Universite de Nantes-CNRS, 2, rue de la Houssiniere, 44322 Nantes Cedex 3 (France)

Inductively coupled plasma (ICP) etching is suitable for producing semiconductor structures with a high aspect ratio. While the morphology of the structures is very satisfactory, less is known about other aspects related to the process, but with potential influence in the optical performance of the devices. We present herein a study of the mechanical stresses produced by the ICP process in the fabrication of ridge waveguides in InP. Stresses purely induced by the process are revealed by the spectral analysis of the cathodoluminescence. A dependence of the stress distribution on the aspect ratio of the waveguides is demonstrated.

• OSTI ID: 21175628
• Journal Information: Applied Physics Letters, Vol. 93, Issue 13; Other Information: DOI: 10.1063/1.2994691; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
CATHODOLUMINESCENCE
ETCHING
INDIUM PHOSPHIDES
MORPHOLOGY
PLASMA
RESIDUAL STRESSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPUTTERING
WAVEGUIDES