In situ stress evolution during magnetron sputtering of transition metal nitride thin films
- Laboratoire PHYMAT, UMR 6630, Universite de Poitiers-CNRS, SP2MI, Teleport 2, Bd Marie et Pierre Curie, 86962 Chasseneuil-Futuroscope (France)
Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.
- OSTI ID:
- 21175582
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 11; Other Information: DOI: 10.1063/1.2985814; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Intrinsic stress in ZrN thin films: Evaluation of grain boundary contribution from in situ wafer curvature and ex situ x-ray diffraction techniques
Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures
Correlation between the mechanical stress and microstructure in reactive bias magnetron sputtered silicon nitride films
Journal Article
·
Tue May 01 00:00:00 EDT 2012
· Journal of Applied Physics
·
OSTI ID:21175582
Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures
Journal Article
·
Tue Mar 01 00:00:00 EST 2005
· Journal of Applied Physics
·
OSTI ID:21175582
+1 more
Correlation between the mechanical stress and microstructure in reactive bias magnetron sputtered silicon nitride films
Book
·
Thu Dec 31 00:00:00 EST 1998
·
OSTI ID:21175582