Crystal growth and characterization of Cd{sub 0.8}Mn{sub 0.2}Te using Vertical Bridgman method
- School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072 (China)
By Vertical Bridgman method, several Cd{sub 0.8}Mn{sub 0.2}Te (CdMnTe) ingots were grown. The structure and crystallinity of the ingots were evaluated by X-ray powder diffraction and double-crystal rocking curve measurement and etch pits density (EPD) measurement. The results showed a pure cubic zinc blende structure throughout the ingots with the full width at half maximum (FWHM) of 40-70 arcsec and EPD of (6-8) x 10{sup 4} cm{sup -2}, indicating a high crystalline perfection. The Mn concentration distribution along the axial and radial direction of the ingots was measured by inductively coupled plasma atomic emission spectrometer (ICP-AES). The segregation coefficient k{sub eff} for Mn along the axis of the ingots is determined to be 0.95, and the radial variation of Mn concentration is within 0.002. Current-voltage (I-V) measurement reveals that sputtered Au film can form good ohmic contact to CdMnTe wafer and all the wafers of the as-grown crystals have the resistivity within (1-4) x 10{sup 6} {omega} cm. IR transmission measurement in the wave number region from 4000 to 1000 cm{sup -1} exhibits that the IR transmittance of CdMnTe wafers is 50-55%, which is close to the theoretical value.
- OSTI ID:
- 21144001
- Journal Information:
- Materials Research Bulletin, Vol. 43, Issue 5; Other Information: DOI: 10.1016/j.materresbull.2007.05.029; PII: S0025-5408(07)00228-0; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods
Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods