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Title: Crystal growth and characterization of Cd{sub 0.8}Mn{sub 0.2}Te using Vertical Bridgman method

Abstract

By Vertical Bridgman method, several Cd{sub 0.8}Mn{sub 0.2}Te (CdMnTe) ingots were grown. The structure and crystallinity of the ingots were evaluated by X-ray powder diffraction and double-crystal rocking curve measurement and etch pits density (EPD) measurement. The results showed a pure cubic zinc blende structure throughout the ingots with the full width at half maximum (FWHM) of 40-70 arcsec and EPD of (6-8) x 10{sup 4} cm{sup -2}, indicating a high crystalline perfection. The Mn concentration distribution along the axial and radial direction of the ingots was measured by inductively coupled plasma atomic emission spectrometer (ICP-AES). The segregation coefficient k{sub eff} for Mn along the axis of the ingots is determined to be 0.95, and the radial variation of Mn concentration is within 0.002. Current-voltage (I-V) measurement reveals that sputtered Au film can form good ohmic contact to CdMnTe wafer and all the wafers of the as-grown crystals have the resistivity within (1-4) x 10{sup 6} {omega} cm. IR transmission measurement in the wave number region from 4000 to 1000 cm{sup -1} exhibits that the IR transmittance of CdMnTe wafers is 50-55%, which is close to the theoretical value.

Authors:
; ; ; ; ;  [1]
  1. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072 (China)
Publication Date:
OSTI Identifier:
21144001
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 43; Journal Issue: 5; Other Information: DOI: 10.1016/j.materresbull.2007.05.029; PII: S0025-5408(07)00228-0; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AUGER ELECTRON SPECTROSCOPY; BRIDGMAN METHOD; CADMIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALS; ELECTRICAL PROPERTIES; FILMS; GOLD; MANGANESE COMPOUNDS; NEUTRON DIFFRACTION; OPTICAL PROPERTIES; SEGREGATION; SEMICONDUCTOR MATERIALS; TELLURIDES; X-RAY DIFFRACTION; ZINC SULFIDES

Citation Formats

Zhang Jijun, Wanqi, Jie, Tao, Wang, Dongmei, Zeng, Shuying, Ma, Hui, Hua, and Bo, Yang. Crystal growth and characterization of Cd{sub 0.8}Mn{sub 0.2}Te using Vertical Bridgman method. United States: N. p., 2008. Web. doi:10.1016/j.materresbull.2007.05.029.
Zhang Jijun, Wanqi, Jie, Tao, Wang, Dongmei, Zeng, Shuying, Ma, Hui, Hua, & Bo, Yang. Crystal growth and characterization of Cd{sub 0.8}Mn{sub 0.2}Te using Vertical Bridgman method. United States. https://doi.org/10.1016/j.materresbull.2007.05.029
Zhang Jijun, Wanqi, Jie, Tao, Wang, Dongmei, Zeng, Shuying, Ma, Hui, Hua, and Bo, Yang. Tue . "Crystal growth and characterization of Cd{sub 0.8}Mn{sub 0.2}Te using Vertical Bridgman method". United States. https://doi.org/10.1016/j.materresbull.2007.05.029.
@article{osti_21144001,
title = {Crystal growth and characterization of Cd{sub 0.8}Mn{sub 0.2}Te using Vertical Bridgman method},
author = {Zhang Jijun and Wanqi, Jie and Tao, Wang and Dongmei, Zeng and Shuying, Ma and Hui, Hua and Bo, Yang},
abstractNote = {By Vertical Bridgman method, several Cd{sub 0.8}Mn{sub 0.2}Te (CdMnTe) ingots were grown. The structure and crystallinity of the ingots were evaluated by X-ray powder diffraction and double-crystal rocking curve measurement and etch pits density (EPD) measurement. The results showed a pure cubic zinc blende structure throughout the ingots with the full width at half maximum (FWHM) of 40-70 arcsec and EPD of (6-8) x 10{sup 4} cm{sup -2}, indicating a high crystalline perfection. The Mn concentration distribution along the axial and radial direction of the ingots was measured by inductively coupled plasma atomic emission spectrometer (ICP-AES). The segregation coefficient k{sub eff} for Mn along the axis of the ingots is determined to be 0.95, and the radial variation of Mn concentration is within 0.002. Current-voltage (I-V) measurement reveals that sputtered Au film can form good ohmic contact to CdMnTe wafer and all the wafers of the as-grown crystals have the resistivity within (1-4) x 10{sup 6} {omega} cm. IR transmission measurement in the wave number region from 4000 to 1000 cm{sup -1} exhibits that the IR transmittance of CdMnTe wafers is 50-55%, which is close to the theoretical value.},
doi = {10.1016/j.materresbull.2007.05.029},
url = {https://www.osti.gov/biblio/21144001}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 5,
volume = 43,
place = {United States},
year = {2008},
month = {5}
}