Negative-U property of interstitial hydrogen in GaAs
- Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark)
We identify the donor level of interstitial hydrogen in GaAs, which is characterized by the activation enthalpy E{sub C}-E{sub t}=0.13 eV. This level is the marker of two different but closely related defect structures, which are indistinguishable as far as their emission properties are concerned; however, discernible on the basis of their different dynamical behaviors are revealed by annealing studies. We interpret the two structures as regular bond center hydrogen H(BC) and bond center hydrogen H(BC{sup '}), which is perturbed by the local strain from a neighbor point defect. We demonstrate negative-U properties of the perturbed structure and infer that the corresponding acceptor H(T{sup '}) lies deep in the band gap. These results for interstitial hydrogen in GaAs are in every aspect analogous to the properties of interstitial hydrogen in Si.
- OSTI ID:
- 21143596
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 78, Issue 3; Other Information: DOI: 10.1103/PhysRevB.78.035211; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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