Potential roughness near lithographically fabricated atom chips
- Physikalisches Institut, Universitaet Heidelberg, D-69120 Heidelberg (Germany)
- Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100 (Israel)
Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a 100-{mu}m-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.
- OSTI ID:
- 21140693
- Journal Information:
- Physical Review. A, Vol. 76, Issue 6; Other Information: DOI: 10.1103/PhysRevA.76.063621; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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