Soft x-ray induced Ag diffusion in amorphous pulse laser deposited As{sub 50}Se{sub 50} thin films: An x-ray photoelectron and secondary ion mass spectroscopy study
- Foundation of Research and Technology Hellas-Institute of Chemical Engineering and High Temperature Chemical Processes (FORTH/ICE-HT), P.O. Box 1414, Rio, Patras GR-26504 (Greece)
- Department of General and Inorganic Chemistry and Research Center, University of Pardubice, Legions Square 565, Pardubice 53210 (Czech Republic)
In the present paper, x-ray photoelectron spectroscopy (XPS) is used to induce and study the Ag diffusion and dissolution in pulsed laser deposited As{sub 50}Se{sub 50} amorphous chalcogenide films. Dynamic secondary ion mass spectroscopy (SIMS) is also employed to investigate the Ag atomic concentration in depth. Dynamic SIMS measurements reveal that even before x-ray irradiation a considerable percentage of the total silver amount diffuses into the matrix forming an {approx}70 nm mixed Ag-Se-As layer. XPS analysis shows that x-ray irradiation induces further diffusion of silver into the chalcogenide matrix. At the end of the procedure silver is found to be homogeneously dissolved into the matrix leaving only a 5-7 nm thick surface layer with excess silver concentration. In this surface layer stable Ag{sub 2}Se clusters existing probably in quasicrystalline form prohibit further diffusion. The origin of the mechanism of the x-ray induced Ag diffusion and dissolution in amorphous chalcogenides is discussed in light of the present results.
- OSTI ID:
- 21137453
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 4; Other Information: DOI: 10.1063/1.2970104; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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