Temperature-dependent growth and transient state of hydrogen-induced nanocavities in silicon

Journal Article · Fri Aug 01 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2960347· OSTI ID:21137431

Kinomura, A; Suzuki, R; Ohdaira, T; Muramatsu, M; He, C; Oshima, N; Matsumoto, T; Tanoue, H; Horino, Y ^[1]

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1. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

Silicon samples H-implanted to a dose of 3x10{sup 16} cm{sup -2} were analyzed by positron annihilation and ion backscattering techniques to investigate the growth of H-induced nanocavities at different annealing temperatures (400-900 deg. C). Positron annihilation lifetime spectroscopy revealed a constant increase in the vacancy cluster size (i.e., nanocavity size) as the annealing temperature increased. On the other hand, Doppler broadening and ion channeling measurements suggested strong interaction between the implanted H and the defects depending on the annealing temperature. Furthermore, Au-gettering experiments revealed that transient gettering sites are formed at 600 deg. C between the H projected range and the surface. These results indicated that H desorption is one of the key factors in the optimization of the gettering process with H-induced nanocavities.

• OSTI ID: 21137431
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
BACKSCATTERING
CRYSTAL GROWTH
DESORPTION
DOPPLER BROADENING
HYDROGEN
ION CHANNELING
NANOSTRUCTURES
POSITRONS
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
STRONG INTERACTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
VACANCIES