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Title: Preparation and characterization of epitaxial Fe{sub 2-x}Ti{sub x}O{sub 3} films with various Ti concentrations (0.5<x<1.0)

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2966298· OSTI ID:21137427
; ; ;  [1];  [2]
  1. Department of Applied Chemistry, Graduate School of Natural Science and Technology, Okayama University, Tsushimanaka 3-1-1, Okayama 700-8530 (Japan)
  2. Department of Physics, Graduate School of Natural Science and Technology, Okayama University, Tsushimanaka 3-1-1, Okayama 700-8530 (Japan)

An ilmenite-hematite solid solution (Fe{sub 2-x}Ti{sub x}O{sub 3}) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe{sub 2-x}Ti{sub x}O{sub 3} films with a wide range of Ti concentrations--x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94--on {alpha}-Al{sub 2}O{sub 3}(001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R3 symmetry, where Ti-rich and Fe-rich layers are stacked alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x<0.7. The inverse temperature dependence of the resistivities of the films indicates their semiconducting behavior. The film resistivities decrease with decreasing Ti concentration.

OSTI ID:
21137427
Journal Information:
Journal of Applied Physics, Vol. 104, Issue 3; Other Information: DOI: 10.1063/1.2966298; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English