Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy
- National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)
We report steady-state and time-resolved photoluminescence (TRPL) measurements on individual GaN nanowires (6-20 {mu}m in length, 30-940 nm in diameter) grown by a nitrogen-plasma-assisted, catalyst-free molecular-beam epitaxy on Si(111) and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9x10{sup 3} cm/s for our silicon-doped GaN nanowires.
- OSTI ID:
- 21137366
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 12; Other Information: DOI: 10.1063/1.2940732; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM OXIDES
COMPRESSION STRENGTH
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTOLUMINESCENCE
QUANTUM WIRES
QUARTZ
RECOMBINATION
RED SHIFT
SEMICONDUCTOR MATERIALS
SILICA
SILICON
STEADY-STATE CONDITIONS
TEMPERATURE RANGE 0273-0400 K
TENSILE PROPERTIES
TIME RESOLUTION