Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect
- Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4 (Canada)
The tungsten filament aging when using silacyclobutane (SCB) as a source gas in a hot-wire chemical vapor deposition reactor was systematically studied by the characterization of surface morphology using scanning electron microscopy and the chemical composition analysis of the filament surfaces using Auger electron spectroscopy. It is shown that filament aging involves the formation of silicides and under more severe conditions, a pure silicon deposit. At low pressures of SCB samples, e.g., 0.06 and 0.03 Torr, only Si{sub 3}W{sub 5} alloy was formed. Silicon-rich silicide, Si{sub 2}W, was found when using a higher pressure of SCB at 0.12 Torr. At the high SCB pressure of 0.12 Torr and low temperatures, pure silicon was deposited on the W filament surface. It is also demonstrated that H{sub 2} can etch the aged filament at high temperatures above 1900 deg. C. The etching products detected by the 10.5 eV vacuum ultraviolet laser single photon ionization/time-of-flight mass spectrometer include SiH{sub 4}, SiCH{sub x} (x=2-5), and SiC{sub 2}H{sub y} (y=4-7)
- OSTI ID:
- 21137360
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 12; Other Information: DOI: 10.1063/1.2949278; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
AGING
AUGER ELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
ETCHING
FILAMENTS
HYDROGEN
PRESSURE RANGE PA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILANES
SILICIDES
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
TIME-OF-FLIGHT MASS SPECTROMETERS
TUNGSTEN
ULTRAVIOLET RADIATION