Structures And Magnetization Of Defect-Associated Sites In Silicon
Journal Article
·
· AIP Conference Proceedings
- Department of Physics, University of Central Florida, Orlando, FL 32816-2385 (United States)
- Department of Physics, Brigham Young University, Provo, UT 84602 (United States)
- Institute of Electron Technology (ITE), al. Lotnikow 32/46, Warsaw 02-668 Poland (Poland)
- NHMFL, Florida State University, Tallahassee, FL 32310-3706 (United States)
- Apollo Technologies, Inc. 205 Waymont Court, Suite 111, Lake Mary, FL 32746 (United States)
To better understand the mechanism of the reported 'quasi-ferromagnetism' observed in Si ions self-implanted or irradiated silicon, we carry out high resolution transmission electron microscopy (HRTEM), magnetization measurements using superconducting quantum interference device (SQUID) magnetometer, and ferromagnetic resonance (FMR) measurements of the magnetic interaction of the defect-associated sites in silicon damaged by silicon self-implantation or energetic particle beams. The SQUID measurements showed that the silicon self-implanted sample has paramagnetic ordering. FMR measurements indicated the He{sup ++} irradiated sample has a ferromagnetic interaction and yields a Lande g-factor of 2.35.
- OSTI ID:
- 21137090
- Journal Information:
- AIP Conference Proceedings, Vol. 1003, Issue 1; Conference: ICMM-2007: International conference on magnetic materials, Kolkata (India), 11-16 Dec 2007; Other Information: DOI: 10.1063/1.2928955; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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