Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses
- Institute of Plasma Physics and Laser Microfusion, Association EURATOM-IPPLM, 23 Hery St. 01-497 Warsaw (Poland)
- Middle East Technical University, Ankara (Turkey)
This work reports experiments concerning specific application of laser-produced plasma at IPPLM in Warsaw. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 {mu}m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced plasma was performed with the use of 'time-of-flight' ion diagnostics simultaneously with other diagnostic methods. The results of laser-matter interaction were obtained in dependence on laser pulse parameters, illumination geometry and target material. The modified SiO{sub 2} layers and sample surface properties were characterised with the use of different methods at the Middle-East Technological University in Ankara and at the Warsaw University of technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.
- OSTI ID:
- 21136949
- Journal Information:
- AIP Conference Proceedings, Vol. 993, Issue 1; Conference: PLASMA 2007: International conference on research and applications of plasmas; 4. German-Polish conference on plasma diagnostics for fusion and applications; 6. French-Polish seminar on thermal plasma in space and laboratory, Greifswald (Germany), 16-19 Oct 2007; Other Information: DOI: 10.1063/1.2909154; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Diagnostics, Control and Performance Parameters for the BELLA High Repetition Rate Petawatt Class Laser
Proof-of-concept Talbot–Lau x-ray interferometry with a high-intensity, high-repetition-rate, laser-driven K-alpha source