Thermal Stress Behavior of Micro- and Nano-Size Aluminum Films
- Institute of Technology and Science, the University of Tokushima, Tokushima (Japan)
- Department of Mechanical Engineering, Kobe City Collage of Technology, Kobe (Japan)
In-situ observation of thermal stresses in thin films deposited on silicon substrate was made by X-ray and synchrotron radiation. Specimens prepared in this experiment were micro- and nano-size thin aluminum films with and without passivation film. The thickness of the film was 1 micrometer for micro-size films and 10, 20 and 50 nanometer for nano-size films. The stress measurement in micro-size films was made by X-ray radiation whereas the measurement of nano-size films was made by synchrotron radiation. Residual stress measurement revealed tensile stresses in all as-deposited films. Thermal stresses were measured in a series of heating- and cooling-stage. Thermal stress behavior of micro-size films revealed hysteresis loop during a heating and cooling process. The width of a hysteresis loop was larger in passivated film that unpassivated film. No hysteresis loops were observed in nano-size films with SiO{sub 2} passivation. Strengthning mechanism in thin films was discussed on a passivation film and a film thickness.
- OSTI ID:
- 21136856
- Journal Information:
- AIP Conference Proceedings, Vol. 989, Issue 1; Conference: International conference on neutron and X-ray scattering 2007, Serpong and Bandung (Indonesia), 23-31 Jul 2007; Other Information: DOI: 10.1063/1.2906070; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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