The Effect of SiO{sub 2} Addition on the Characteristics of CuFe{sub 2}O{sub 4} Ceramics for NTC Thermistor
Journal Article
·
· AIP Conference Proceedings
- Department of Physics, Education University of Indonesia, UPI Jl. Setiabudi, Bandung (Indonesia)
- Nuclear Technology Center for Materials and Radiometry-BATAN, Jl. Tamansari 71, Bandung, 40132 (Indonesia)
The effect of SiO{sub 2} addition on the characteristics of CuFe{sub 2}O{sub 4} ceramics for NTC thermistors has been studied. The ceramics were produced by pressing a homogeneous mixture of CuO, Fe{sub 3}O{sub 4} and SiO{sub 2} (0-0.75 w/o) powders in appropriate proportions to produce CuFe{sub 2}O{sub 4} based ceramics and sintering the pressed powder at 1100 deg. C for 2 hours in air. Electrical characterization was done by measuring electrical resistivity of the ceramics at various temperatures (25 deg. C - 100 deg. C). Microstructure and structural analyses were also carried out by using optical microscopy and X-ray diffraction (XRD), respectively. The XRD analyses showed that the CuFe{sub 2}O{sub 4} and SiO{sub 2} added-CuFe{sub 2}O{sub 4} ceramics have crystal structure of cubic spinel. The presence of second phase could not be identified from the XRD analyses. According to the electrical data, it was known that the SiO{sub 2} addition increased the thermistor constant (B) and the room temperature electrical resistivity ({rho}{sub RT}). The value of B and {rho}{sub RT} of the produced CuFe{sub 2}O{sub 4} ceramics namely B = 2548-3308 deg. K and {rho}{sub RT} = 291-9400 ohm's, fitted market requirement.
- OSTI ID:
- 21136841
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 989; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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