Domain Walls in Gapped Graphene

Journal Article · Fri Aug 22 00:00:00 EDT 2008 · Physical Review Letters

DOI:https://doi.org/10.1103/PHYSREVLETT.101.087204· OSTI ID:21134162

Semenoff, G W; Semenoff, V; Fei, Zhou ^[1]

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1. Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, British Columbia V6T 1Z1 (Canada)

The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support midgap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the midgap band is partially filled, the domain wall can behave like a one-dimensional metal embedded in a semiconductor and could potentially be used as a single-channel quantum wire.

• OSTI ID: 21134162
• Journal Information: Physical Review Letters, Vol. 101, Issue 8; Other Information: DOI: 10.1103/PhysRevLett.101.087204; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
METALS
ONE-DIMENSIONAL CALCULATIONS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
WALLS