Hole Localization in the One-Dimensional Doped Anderson-Hubbard Model

Journal Article · Fri Jul 04 04:00:00 EDT 2008 · Physical Review Letters

DOI:https://doi.org/10.1103/PHYSREVLETT.101.016407· OSTI ID:21134097

Okumura, M; Yamada, S; Machida, M ^[1]; Taniguchi, N ^[2]

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1. CCSE, Japan Atomic Energy Agency, 6-9-3 Higashi-Ueno, Taito-ku, Tokyo 110-0015 (Japan)
2. Institute of Physics, University of Tsukuba, Tennodai, Tsukuba 305-8571 (Japan)

We study an interplay of disorder and correlation in the one-dimensional hole-doped Hubbard-model with disorder (Anderson-Hubbard model) by using the density-matrix renormalization group method. Concentrating on the doped-hole-density profile, we find in a large U/t regime that the clean system exhibits a simple fluidlike behavior whereas finite disorders create locally Mott regions which expand their area with increasing the disorder strength contrary to the conventional sense. We propose that such an anomalous Mott phase formation assisted by disorder is easily observable in atomic Fermi gases by setting up the box-shape trap.

• OSTI ID: 21134097
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 1 Vol. 101; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY MATRIX
DOPED MATERIALS
FERMI GAS
HUBBARD MODEL
ONE-DIMENSIONAL CALCULATIONS
RENORMALIZATION