Structure, bonding and physical properties of tetragonal and orthorhombic SiS{sub 2} from (hybrid) DFT calculations
- Christopher Ingold Laboratories, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)
The energetics, structure and physical properties of tetragonal and orthorhombic SiS{sub 2} were calculated by periodic density functional theory (DFT) calculations, using both localized orbital and projected augmented wave basis-sets. All methods applied agree upon the relative energies of the different polymorphs but show differences in the predicted geometries, which are minimized upon improving the basis-set quality. The hybrid PBE0 functional was found to give the best match between experimental and calculated structures. When comparing SiS{sub 2} with its much better studied oxide analog silica, we observe that upon substituting sulphur for oxygen, the energy landscape changes dramatically. Other effects of changing S for O are found to be smaller Si-X-Si angles, a broader distribution of X-Si-X angles, a more flexible framework and a significantly reduced band gap. The latter is in line with the experimental observation of photoluminescence in related GaGeS{sub 2} compounds and suggests that SiS{sub 2} might find application in UV light emitting diodes. Finally, a comparison of the maximally localized Wannier functions demonstrates that the Si-S bonds in SiS{sub 2} have a considerably more covalent character than the Si-O bonds in silica. - Graphical abstract: Periodic DFT calculations were employed to study the (physical) properties of tetragonal and orthorhombic SiS{sub 2}. The results obtained were compared with those for SiS{sub 2} better studied oxide analog silica and demonstrate large changes in the materials' energy landscape, nature of bonding, flexibility and band gap, upon substitution of sulphur for oxygen.
- OSTI ID:
- 21128473
- Journal Information:
- Journal of Solid State Chemistry, Vol. 181, Issue 9; Other Information: DOI: 10.1016/j.jssc.2008.06.006; PII: S0022-4596(08)00295-8; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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