Microstructural evolution in H ion induced splitting of freestanding GaN
- Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle (Germany)
- Departement de Physique, Universite de Montreal, Succursale Centre Ville, Montreal, Quebec, H3T 1J4 (Canada)
- Department of Physics, Martin-Luther-University Halle-Wittenberg, Friedemann-Bach-Platz 6, D 06108 Halle (Germany)
We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 deg. C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 deg. C. Extended internal surfaces develop around 550 deg. C leading to the exfoliation of GaN thin layer.
- OSTI ID:
- 21123992
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 3; Other Information: DOI: 10.1063/1.2955832; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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