Effect of gas mixing ratio on etch behavior of ZrO{sub 2} thin films in BCl{sub 3}/He inductively coupled plasma
- Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700 (Korea, Republic of)
This article reports a study carried out on a model-based analysis of the etch mechanism for ZrO{sub 2} thin films in a BCl{sub 3}/He inductively coupled plasma. It was found that an increase in the He mixing ratio at a fixed gas pressure and input power results in an increase in the ZrO{sub 2} etch rate, which changes from 36 to 57 nm/min for 0-83% He. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics were noticeably influenced by the initial composition of the BCl{sub 3}/He mixture, resulting in the nonmonotonic or nonlinear behaviors of species densities. Using the model-based analysis of etch kinetics, it was demonstrated that the behavior of the ZrO{sub 2} etch rate corresponds to the ion-flux-limited etch regime of the ion-assisted chemical reaction.
- OSTI ID:
- 21123902
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 26, Issue 3; Other Information: DOI: 10.1116/1.2891255; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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