Real time monitoring of pentacene growth on SiO{sub 2} from a supersonic source

Journal Article · Mon Jun 23 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2946497· OSTI ID:21120867

Hong, S; Bhargava, S; Engstrom, J R ^[1]; Amassian, A; Ferguson, J D; Malliaras, G G ^[2]; Woll, A R ^[3]; Brock, J D ^[4]

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1. School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853 (United States)
2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
3. Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853 (United States)
4. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)

Thin film growth of pentacene on SiO{sub 2} using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy E{sub i} and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, E{sub i}=2.5-7.2 eV and GR=0.0015-0.2 ML s{sup -1}, the thin film phase is always observed. We find that while the effect of E{sub i} on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.

• OSTI ID: 21120867
• Journal Information: Applied Physics Letters, Vol. 92, Issue 25; Other Information: DOI: 10.1063/1.2946497; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EV RANGE 01-10
KINETIC ENERGY
MOLECULAR BEAM EPITAXY
ORGANIC SEMICONDUCTORS
PENTACENE
ROUGHNESS
SILICON OXIDES
SYNCHROTRONS
THIN FILMS
X-RAY DIFFRACTION