Ion irradiation-induced local structural changes in amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin film
- Dipartimento di Fisica ed Astronomia, Universita di Catania, and MATIS CNR-INFM 64 via S. Sofia, I-95123 Catania (Italy)
- Dipartimento di Fisica ed Astronomia, Universita di Catania, 64 via S. Sofia, I-95123 Catania, Italy and CNR-IMM, Stradale Primosole, 50, 95121 Catania (Italy)
- INAF-Osservatorio Astrofisico di Catania, via S. Sofia 78, 95123 Catania (Italy)
The crystallization kinetics of as-deposited and ion implanted amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films has been measured by time resolved reflectivity. An enhancement of the crystallization process occurred in the implanted samples. Raman scattering analysis was used to correlate the stability of the amorphous phase to its structure. The variation of the Raman signal after ion irradiation is consistent with a reduction in Ge-Te tetrahedral bonds, characteristic of the Ge coordination in amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}.
- OSTI ID:
- 21120827
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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