Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO{sub 3}

Journal Article · Mon Feb 25 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2888747· OSTI ID:21120562

Yanan, Zhi; Dean, Liu; Aimin, Yan; Jianfeng, Sun; Yu, Zhou; Zhu, Luan; Yin, Hang; Liren, Liu ^[1]

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1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO{sub 3} is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect.

• OSTI ID: 21120562
• Journal Information: Applied Physics Letters, Vol. 92, Issue 8; Other Information: DOI: 10.1063/1.2888747; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
ELECTRIC FIELDS
LASERS
LITHIUM COMPOUNDS
NUCLEATION
PHOTOIONIZATION
SPACE CHARGE
STOICHIOMETRY
TANTALATES
ULTRAVIOLET RADIATION