Effect of energy relaxation of H{sup 0} atoms at the wall on the production profile of H{sup -} ions in large negative ion sources
Journal Article
·
· Review of Scientific Instruments
- Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama 223-8522 (Japan)
Production and transport processes of the H{sup 0} atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H{sup -} ions. In this analysis, we focus on the effect of the energy relaxation of the H{sup 0} atoms at the wall on the H{sup -} ion production from the H{sup 0} atoms. The result indicates that, by considering the energy relaxation of the H{sup 0} atoms at the wall, the production profile of the surface-produced H{sup -} ion is well reflected in the production profile of the H{sup 0} atom production.
- OSTI ID:
- 21103919
- Journal Information:
- Review of Scientific Instruments, Vol. 79, Issue 2; Conference: ICIS 2007: 12. international conference on ion sources, Jeju (Korea, Republic of), 26-31 Aug 2007; Other Information: DOI: 10.1063/1.2802583; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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