Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs

Journal Article · Mon May 12 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2927481· OSTI ID:21102051

Mack, S; Myers, R C; Heron, J T; Gossard, A C; Awschalom, D D ^[1]

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1. Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

Heavily alloyed, 100 nm Ga{sub 1-x}Mn{sub x}As (x>0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x>0.1), while substitutional Mn content is proportional to x within a large window of growth conditions.

• OSTI ID: 21102051
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
CRYSTAL GROWTH
CURIE POINT
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GALLIUM ARSENIDES
MAGNETIC SEMICONDUCTORS
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
STOICHIOMETRY
THIN FILMS