Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate
- Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
- Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 1175776 (Singapore)
- Department of Physics, National University of Singapore, 2 Science Drive, Singapore 117542 (Singapore)
- Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore)
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
- OSTI ID:
- 21102026
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 92; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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