Tin laser-produced plasma source modeling at 13.5 nm for extreme ultraviolet lithography

Journal Article · Mon Apr 14 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2906901· OSTI ID:21101986

White, J; O'Sullivan, G ^[1]; Zakharov, S; Choi, P ^[2]; Zakharov, V ^[3]; Nishimura, H; Fujioka, S; Nishihara, K ^[4]

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1. School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)
2. EPPRA SAS, Villebon sur Yvette 91140 (France)
3. Keldysh Institute of Applied Mathematics RAS, Moscow 125047 (Russian Federation)
4. Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871 (Japan)

Extreme ultraviolet lithography semiconductor manufacturing requires a 13.5 nm light source. Laser-produced plasma emission from Sn V-Sn XIV ions is one proposed industry solution. The effect of laser pulse width and spatial profile on conversion efficiency is analyzed over a range of power densities using a two-dimensional radiative magnetohydrodynamic code and compared to experiment using a 1.064 {mu}m, neodymium:yttrium aluminium garnet laser on a planar tin target. The calculated and experimental conversion efficiencies and the effects of self-absorption in the plasma edge are compared. Best agreement between theory and experiment is found for an 8.0 ns Gaussian pulse.

• OSTI ID: 21101986
• Journal Information: Applied Physics Letters, Vol. 92, Issue 15; Other Information: DOI: 10.1063/1.2906901; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM OXIDES
EMISSION
EXTREME ULTRAVIOLET RADIATION
FERRITE GARNETS
LASER-PRODUCED PLASMA
LASERS
LIGHT SOURCES
MAGNETOHYDRODYNAMICS
NEODYMIUM
PLASMA PRODUCTION
POWER DENSITY
PULSES
SELF-ABSORPTION
SEMICONDUCTOR MATERIALS
SIMULATION
TIN
TWO-DIMENSIONAL CALCULATIONS
YTTRIUM COMPOUNDS