Form birefringence in porous semiconductors and dielectrics: A review
Journal Article
·
· Crystallography Reports
- Moscow State University (Russian Federation)
The phenomenon of optical anisotropy in porous semiconductors and dielectrics (porous silicon, gallium phosphide, and alumina) and photonic crystal structures formed on their basis is reviewed. It is shown that anisotropic nanostructuring of initially isotropic media leads to the occurrence of strong birefringence. Applicability of the effective-medium model to description of the form birefringence in porous semiconductors and dielectrics is discussed.
- OSTI ID:
- 21090883
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 4 Vol. 52; ISSN 1063-7745; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
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