Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schroedinger and Poisson equations

Journal Article · Sun Oct 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606100149· OSTI ID:21088661

Zubkov, V. I. ^[1]

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1. St. Petersburg State University of Electrical Engineering 'LETI' (Russian Federation), E-mail: [e-mail]

Methods are developed for calculating capacitance-voltage characteristics and finding the concentration profile of free charge carriers in semiconductor doped heterostructures containing a quantum well. The capacitance-voltage characteristic of a heterostructure with a quantum well was calculated using a numerical self-consistent solution of the Poisson and Schroedinger equations in the context of a unified quantum-mechanical approach. The suggested method was applied to the simulation and analysis of the experimental capacitance-voltage characteristics of heterostructures with strained InGaAs/GaAs quantum wells.

• OSTI ID: 21088661
• Journal Information: Semiconductors, Vol. 40, Issue 10; Other Information: DOI: 10.1134/S1063782606100149; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CHARGE CARRIERS
DOPED MATERIALS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MATHEMATICAL SOLUTIONS
POISSON EQUATION
QUANTUM MECHANICS
QUANTUM WELLS
SCHROEDINGER EQUATION
SEMICONDUCTOR MATERIALS
SIMULATION