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Title: Dielectric properties of polycrystalline ZnS

Abstract

The temperature and frequency dependences of the permittivity of polycrystalline zinc sulfide are investigated. The permittivity is calculated from the electronic-structure parameters. It is shown that an increase in the permittivity at frequencies below 10 kHz occurs as a result of space-charge polarization, which is due to the presence of charged dislocations in interlayer and grain boundaries.

Authors:
;  [1]
  1. Nizhni Novgorod State University (Russian Federation)
Publication Date:
OSTI Identifier:
21088618
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782606010040; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; ELECTRONIC STRUCTURE; FREQUENCY DEPENDENCE; GRAIN BOUNDARIES; KHZ RANGE 01-100; PERMITTIVITY; POLARIZATION; POLYCRYSTALS; ZINC SULFIDES

Citation Formats

Shevarenkov, D. N., E-mail: Shevarenkov@phys.unn.ru, and Shchurov, A. F.. Dielectric properties of polycrystalline ZnS. United States: N. p., 2006. Web. doi:10.1134/S1063782606010040.
Shevarenkov, D. N., E-mail: Shevarenkov@phys.unn.ru, & Shchurov, A. F.. Dielectric properties of polycrystalline ZnS. United States. doi:10.1134/S1063782606010040.
Shevarenkov, D. N., E-mail: Shevarenkov@phys.unn.ru, and Shchurov, A. F.. Sun . "Dielectric properties of polycrystalline ZnS". United States. doi:10.1134/S1063782606010040.
@article{osti_21088618,
title = {Dielectric properties of polycrystalline ZnS},
author = {Shevarenkov, D. N., E-mail: Shevarenkov@phys.unn.ru and Shchurov, A. F.},
abstractNote = {The temperature and frequency dependences of the permittivity of polycrystalline zinc sulfide are investigated. The permittivity is calculated from the electronic-structure parameters. It is shown that an increase in the permittivity at frequencies below 10 kHz occurs as a result of space-charge polarization, which is due to the presence of charged dislocations in interlayer and grain boundaries.},
doi = {10.1134/S1063782606010040},
journal = {Semiconductors},
number = 1,
volume = 40,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}