Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 {mu}m
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Samsung Advanced Institute of Technology, Photonics Laboratory (Korea, Republic of)
The growth of the InAs(N) quantum dots on GaAs in a reduced-pressure reactor of metal-organic chemical vapor deposition (MOCVD) is studied. As the nitrogen source, dimethylhydrazine is used. It is currently well-known that the growth temperature of the InGaAs quantum dots should be limited in order to avoid undesirable In and Ga interdiffusion as well as reevaporation of In. However, thick GaAs barrier layers should be grown at the elevated temperature because of the pronounced effect of the growth temperature on the optical quality of the structure. An increase in the temperature of the substrate holder by 100 deg. C requires interrupting the process in the MOCVD reactor for approximately 2 min. The time of this interruption for the temperature rise can come at various stages of the process, namely, (i) after growing the quantum dots and prior to growing the InGaAs coating layer, (ii) during the growth of the coating layer, (iii) after growing the coating layer and before growing the GaAs barrier layer, and (iv) during the growth of the GaAs barrier layer. It is shown that the last variant is the most appropriate for the structures with intense photoluminescence at 1.3 {mu}m. In this case, the thin initial part of the barrier layer is grown under reduced temperature.
- OSTI ID:
- 21088560
- Journal Information:
- Semiconductors, Vol. 40, Issue 4; Other Information: DOI: 10.1134/S1063782606040142; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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