Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

Journal Article · Thu Jun 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S106378260606008X· OSTI ID:21088530

Romaka, V A ^[1]; Gorelenko, Yu K ^[2]; Fruchart, D ^[3]; Stadnyk, Yu V; Romaka, L P ^[2]; Chekurin, V F ^[1]

---

1. National Academy of Sciences of Ukraine, Pidstryhach Institute of Applied Problems of Mechanics and Mathematics (Ukraine)
2. Franko National University (Ukraine)
3. Laboratorie de Cristallographie, CNRS (France)

The effect of high concentrations of acceptor dopants (N{sub A} = 10{sup 20} cm{sup -3}) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetallic semiconductors is studied. The role of impurity bands produced by donors and acceptors in the conductivity of the heavily doped n-ZrNiSn compound is clarified. The transition from activated conductivity to metal conductivity under variations in the concentration of acceptor dopants is observed.

• OSTI ID: 21088530
• Journal Information: Semiconductors, Vol. 40, Issue 6; Other Information: DOI: 10.1134/S106378260606008X; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
FERMI LEVEL
INTERMETALLIC COMPOUNDS
MAGNETIC SUSCEPTIBILITY
NICKEL ALLOYS
SEMICONDUCTOR MATERIALS
TIN ALLOYS
ZIRCONIUM ALLOYS