Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors
- National Academy of Sciences of Ukraine, Pidstryhach Institute of Applied Problems of Mechanics and Mathematics (Ukraine)
- Franko National University (Ukraine)
- Laboratorie de Cristallographie, CNRS (France)
The effect of high concentrations of acceptor dopants (N{sub A} = 10{sup 20} cm{sup -3}) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetallic semiconductors is studied. The role of impurity bands produced by donors and acceptors in the conductivity of the heavily doped n-ZrNiSn compound is clarified. The transition from activated conductivity to metal conductivity under variations in the concentration of acceptor dopants is observed.
- OSTI ID:
- 21088530
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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