Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo{sub 1-x}Ni{sub x}Sb semiconductor alloy is varied. Donor impurities

Journal Article · Sat Jul 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606070074· OSTI ID:21088513

Romaka, V A ^[1]; Shelyapina, M G ^[2]; Fruchart, D ^[3]; Romaka, L P ^[4]; Chekurin, V F ^[1]

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1. National Academy of Sciences of Ukraine, Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine)
2. St. Petersburg State University, Fock Institute of Physics (Russian Federation)
3. CNRS, Laboratoire de Cristallographie (France)
4. Franko National University (Ukraine)

The role of the impurity donor band in the conductivity of the heavily doped and compensated intermetallic TiCoSb semiconductor is determined. The electronic structure of the TiCo{sub 1-x}Ni{sub x}Sb semiconductor alloy is calculated. A model of impurity band transformation in the TiCoSb semiconductor due to donor impurity doping is suggested. The transition from activated to metallic conductivity when varying the TiCo{sub 1-x}Ni{sub x}Sb alloy composition is detected, which we identify with the Anderson transition.

• OSTI ID: 21088513
• Journal Information: Semiconductors, Vol. 40, Issue 7; Other Information: DOI: 10.1134/S1063782606070074; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
COBALT ALLOYS
DOPED MATERIALS
ELECTRONIC STRUCTURE
IMPURITIES
INTERMETALLIC COMPOUNDS
NICKEL ALLOYS
SEMICONDUCTOR MATERIALS
TITANIUM ALLOYS