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Title: Capacitance-voltage characteristics of the p-Cd{sub 0.27}Hg{sub 0.73}Te-based structures with a wide-gap graded-gap surface layer

Abstract

Capacitance-voltage characteristics of the structure In-SiO{sub 2}-(graded-gap layer Cd{sub 0.71-0.27}Hg{sub 0.29-0.73}Te)-p-Cd{sub 0.27}Hg{sub 0.73}Te-GaAs are investigated at temperatures of 80 K and higher. The characteristics have the hysteresis, specifically, the characteristic is similar to a forward portion of the usual high-frequency characteristic (from enrichment to inversion), while the reverse portion has an extended plateau, in which the capacitance of the space-charge region is larger by a factor of approximately 2. To interpret the capacitance-voltage characteristic, the effect of partial screening of the graded-gap part of the space-charge region from the electric field of the test signal, as well as the effect of formation of the potential electron well near the surface due to the recharging of donor levels are considered.

Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
Publication Date:
OSTI Identifier:
21088463
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010095; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM ALLOYS; CAPACITANCE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; HYSTERESIS; LAYERS; MERCURY ALLOYS; SILICA; SILICON OXIDES; SPACE CHARGE; SURFACES; TELLURIUM ALLOYS

Citation Formats

Vasil'ev, V. V., and Mashukov, Yu. P. Capacitance-voltage characteristics of the p-Cd{sub 0.27}Hg{sub 0.73}Te-based structures with a wide-gap graded-gap surface layer. United States: N. p., 2007. Web. doi:10.1134/S1063782607010095.
Vasil'ev, V. V., & Mashukov, Yu. P. Capacitance-voltage characteristics of the p-Cd{sub 0.27}Hg{sub 0.73}Te-based structures with a wide-gap graded-gap surface layer. United States. doi:10.1134/S1063782607010095.
Vasil'ev, V. V., and Mashukov, Yu. P. Mon . "Capacitance-voltage characteristics of the p-Cd{sub 0.27}Hg{sub 0.73}Te-based structures with a wide-gap graded-gap surface layer". United States. doi:10.1134/S1063782607010095.
@article{osti_21088463,
title = {Capacitance-voltage characteristics of the p-Cd{sub 0.27}Hg{sub 0.73}Te-based structures with a wide-gap graded-gap surface layer},
author = {Vasil'ev, V. V. and Mashukov, Yu. P.},
abstractNote = {Capacitance-voltage characteristics of the structure In-SiO{sub 2}-(graded-gap layer Cd{sub 0.71-0.27}Hg{sub 0.29-0.73}Te)-p-Cd{sub 0.27}Hg{sub 0.73}Te-GaAs are investigated at temperatures of 80 K and higher. The characteristics have the hysteresis, specifically, the characteristic is similar to a forward portion of the usual high-frequency characteristic (from enrichment to inversion), while the reverse portion has an extended plateau, in which the capacitance of the space-charge region is larger by a factor of approximately 2. To interpret the capacitance-voltage characteristic, the effect of partial screening of the graded-gap part of the space-charge region from the electric field of the test signal, as well as the effect of formation of the potential electron well near the surface due to the recharging of donor levels are considered.},
doi = {10.1134/S1063782607010095},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}
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