Instability of characteristics of SiC detectors subjected to extreme fluence of nuclear particles
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The operation of detectors irradiated with 8-MeV protons at a fluence of 3 x 10{sup 14} cm{sup -2} has been studied. The detectors were based on modern CVD-grown n-4H-SiC films with a concentration of uncompensated donors equal to {approx}2 x 10{sup 14} cm{sup -3} and a thickness of 55 {mu}m. The high concentration of primary radiation defects ({approx}2 x 10{sup 17} cm{sup -3}) determined the deep compensation of the films. The basic characteristics of the detectors-pulse amplitude and resolution-exhibited temporal instability. This effect is due to prolonged capture of nonequilibrium carriers by radiation centers and the resulting appearance of a polarization voltage in the bulk of the detector. The kinetics of attainment of steady values by the quantities specified above was analyzed.
- OSTI ID:
- 21088453
- Journal Information:
- Semiconductors, Vol. 41, Issue 1; Other Information: DOI: 10.1134/S1063782607010216; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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