Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- CNRS-Universite Montpelier, Groupe d'Etude de Semiconducteur (France)
Electron transport and photoresponse in the terahertz range in a GaN/AlGaN field-effect transistor with the submicrometer gate (0.25 {mu}m) and two-dimensional electron gas in the channel (the electron concentration n{sub s} = 5 x 10{sup 12} cm{sup -2}) were studied at 4.2 K. The charge-carrier mobility in the transistor's channel {mu} = 3500 cm{sup 2}/(V s) was determined from the dependence of the conductance on magnetic field. It is found that the dependence of photovoltage at the radiation frequency f = 574 GHz on the gate voltage (i.e., on the concentration of two-dimensional electrons) features a characteristic maximum, which is related to a resonance response of the subgate plasma in the transistor channel.
- OSTI ID:
- 21088435
- Journal Information:
- Semiconductors, Vol. 41, Issue 2; Other Information: DOI: 10.1134/S1063782607020224; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy