EBIC characterization of strained Si/SiGe heterostructures

Journal Article · Sun Apr 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607040070· OSTI ID:21088089

Zhang, R H; Rozgonyi, G A ^[1]; Seacrist, M ^[2]

---

1. North Carolina State University, Department of Materials Science and Engineering (United States)
2. MEMC Electronic Materials (United States)

Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800 deg. C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E{sub b}. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.

• OSTI ID: 21088089
• Journal Information: Semiconductors, Vol. 41, Issue 4; Other Information: DOI: 10.1134/S1063782607040070; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DISLOCATIONS
GERMANIUM SILICIDES
LAYERS
SCANNING ELECTRON MICROSCOPY
SILICON
TEMPERATURE RANGE 1000-4000 K