Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding
- IHP (Germany)
- IHP/BTU Joint Lab (Germany)
- MPI fuer Mikrostrukturphysik (Germany)
Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centers for carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels.
- OSTI ID:
- 21088079
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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