Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant

Journal Article · Mon Oct 15 04:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S106378260710020X· OSTI ID:21087984

Deryabin, A S; Gutakovskii, A K; Kolesnikov, A V; Sokolov, L V ^[1]

---

1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

Plastically relaxed GeSi films with the Ge fraction equal to 0.29-0.42 and thickness as large as 0.5 {mu}m were grown on Si (001) substrates using the low-temperature (350 deg. C) buffer Si layer and Sb as a surfactant. It is shown that introduction of Sb that smoothens the film surface at the stage of pseudomorphic growth lowers the density of threading dislocations in the plastically relaxed heterostructure by 1-1.5 orders of magnitude and also reduces the final roughness of the surface. The root-mean-square value of roughness smaller than 1 nm was obtained for a film with the Ge content of 0.29 and the density of threading dislocations of about 10{sup 6} cm{sup -2}. It is assumed that the effect of surfactant is based on the fact that the activity of surface sources of dislocations is reduced in the presence of Sb.

• OSTI ID: 21087984
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
DISLOCATIONS
FILMS
GERMANIUM SILICIDES
LAYERS
MOLECULAR BEAM EPITAXY
PLASTICITY
SILICON
SURFACES
SURFACTANTS
TEMPERATURE RANGE 0400-1000 K