Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607100041· OSTI ID:21087978

Sabitov, O Yu; Afanas'ev, A M ^[1]

---

1. Ul'yanovsk State University (Russian Federation)

A method for measuring the characteristics of tunneling and impact ionization in thin-film electroluminescent emitters is suggested. This method makes it possible to find time dependences of the space-charge layer thickness near the anode and the length of the impact ionization region, to determine more exactly the time dependence of the field in the potential barrier at the cathode interface, the maximum depth of the surface states from which electron tunneling occurs, the minimum thickness of the barrier, and the electron tunneling probability, as well as the impact ionization rate for the deep centers related to structural defects of the phosphor layer.

• OSTI ID: 21087978
• Journal Information: Semiconductors, Vol. 41, Issue 10; Other Information: DOI: 10.1134/S1063782607100041; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPLETION LAYER
ELECTROLUMINESCENCE
ELECTRONS
IONIZATION
MANGANESE COMPOUNDS
THIN FILMS
TUNNEL EFFECT
ZINC SULFIDES