Transport properties of two-dimensional hole gas in a Ge{sub 1-x}Si{sub x}/Ge/Ge{sub 1-x}Si{sub x} quantum well in the vicinity of metal-insulator transition

Journal Article · Thu Nov 15 04:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607110085· OSTI ID:21087966

Arapov, Yu G; Neverov, V N; Harus, G I; Shelushinina, N G; Gudina, S V; Karskanov, I V ^[1]; Kuznetsov, O A ^[2]; Visser, A de; Ponomarenko, L ^[3]

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1. Ural Branch of Russian Academy of Sciences, Institute of Metal Physics (Russian Federation)
2. Physicotechnical Institute at Nizhni Novgorod State University (Russian Federation)
3. University of Amsterdam, Van der Waals-Zeeman Institute (Netherlands)

Observation of a low-temperature transition from metallic ({partial_derivative}{rho}/{partial_derivative}T > 0) to insulator ({partial_derivative}{rho}/{partial_derivative}T < 0) behavior of resistivity {rho}(T) induced by a perpendicular magnetic field B is reported for a two-dimensional (2D) hole system confined within Ge layers of a p-Ge{sub 1-x}Si{sub x}/Ge/Ge{sub 1-x}Si{sub x} heterostructure. The essential feature of this system is that it is described by the Luttinger Hamilton with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g{sub T} >> g{sub parallel}). The positive magnetoresistance revealed scales as a function of B/T. We attribute this finding to suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.

• OSTI ID: 21087966
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
DIELECTRIC MATERIALS
ELECTRON-ELECTRON INTERACTIONS
GERMANIUM
GERMANIUM SILICIDES
HOLES
LANDE FACTOR
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
METALS
QUANTUM WELLS
ZEEMAN EFFECT