Thermal stability and radiation resistance of tin valent states in the structure of the (As{sub 2}Se{sub 3}){sub 1-z}(SnSe){sub z-x}(GeSe){sub x} semiconductor glasses

Journal Article · Sat Dec 15 00:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607120056· OSTI ID:21087954

Bordovskii, G A; Kastro, R A; Marchenko, A V ^[1]; Nemov, S A ^[2]

---

1. Russian State Pedagogical University (Russian Federation)
2. St. Petersburg State Polytechnical University (Russian Federation)

The ratio between the content of bivalent and tetravalent tin atoms in the (As{sub 2}Se{sub 3}){sub 1-z}(SnSe){sub z-x}(GeSe){sub x} glasses depends on the rate of quenching of the alloy and on its temperature. Irradiation of these glasses with {gamma}-ray photons brings about a partial oxidation of bivalent tin with formation of amorphous (finely divided) SnO{sub 2} phase blocked by the glass, so that the physicochemical properties of the glasses (density, microhardness, glassformation temperature, and the electrical-conductivity activation energy) are virtually unaffected by irradiation.

• OSTI ID: 21087954
• Journal Information: Semiconductors, Vol. 41, Issue 12; Other Information: DOI: 10.1134/S1063782607120056; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ARSENIC ALLOYS
ARSENIC SELENIDES
ELECTRIC CONDUCTIVITY
GAMMA RADIATION
GERMANIUM ALLOYS
GERMANIUM SELENIDES
GLASS
IRRADIATION
MICROHARDNESS
OXIDATION
PHOTONS
QUENCHING
SELENIUM ALLOYS
SEMICONDUCTOR MATERIALS
STABILITY
TIN ALLOYS
TIN OXIDES
TIN SELENIDES