Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities

Journal Article · Fri Feb 15 00:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1007/S11453-008-2007-8· OSTI ID:21087931

Krivolapchuk, V V ^[1]; Kozhanova, Yu V ^[2]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. St. Petersburg State Polytechnical University (Russian Federation)

By analyzing time-resolved and steady-state photoluminescence spectra, it is established that the spatial distribution of rare-earth ion dopants in wurtzite GaN crystals doped with Sm, Eu, Er, or Tm is governed by the type and concentration of defects in the initial semiconductor matrix as well as by the type of the impurity (its capacity for segregation). Doping with multicharged rare-earth impurities and additionally introduced Zn impurity leads to an intensification of emission. The effect of intensification of emission in the case of n-and p-GaN crystals is considered with the use of the model of isoelectronic traps.

• OSTI ID: 21087931
• Journal Information: Semiconductors, Vol. 42, Issue 2; Other Information: DOI: 10.1007/s11453-008-2007-8; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CRYSTAL DEFECTS
DOPED MATERIALS
ERBIUM IONS
EUROPIUM IONS
GALLIUM NITRIDES
KINETICS
PHOTOLUMINESCENCE
SAMARIUM IONS
SEGREGATION
SEMICONDUCTOR MATERIALS
SPATIAL DISTRIBUTION
STEADY-STATE CONDITIONS
THULIUM IONS
TIME RESOLUTION
ZINC IONS